Electronic device

ABSTRACT

An electronic device includes a semiconductor memory that includes: first and second lines spaced apart from each other and crossing each other; a third line spaced apart from the second line and crossing the second line; a first variable resistance element interposed between the first and second lines and overlapping an intersection of the first and second lines; a second variable resistance element interposed between the second and third lines and overlapping an intersection of the second and third lines, a part of the second variable resistance element generating a greater amount of heat than a part of the first variable resistance element when a current flows through the first variable resistance element in an opposite direction to a current flowing through the second variable resistance element; and a material layer serially connected with the second variable resistance element, disposed between the second and third lines, and exhibiting electrical resistance.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean Patent Application No.10-2018-0005927, entitled “ELECTRONIC DEVICE” and filed on Jan. 17,2018, which is incorporated by reference herein in its entirety.

TECHNICAL FIELD

This patent document relates to memory circuits and devices, and theirapplications in electronic devices or systems.

BACKGROUND

Recently, as electronic appliances trend toward miniaturization, lowpower consumption, high performance, multi-functionality, and so on,semiconductor devices capable of storing information in variouselectronic appliances, such as computers, portable communicationdevices, and so on, have been demanded in the art, and research has beenconducted to develop such semiconductor devices. These semiconductordevices include semiconductor devices that can store data according todifferent resistance states. The semiconductor devices have a switchingcharacteristic that allows them to switch between different resistancestates according to an applied voltage or current. The semiconductordevices include, for example, resistive random access memories (RRAMs),phase change random access memories (PRAMs), ferroelectric random accessmemories (FRAMs), magnetic random access memories (MRAMs), E-fuses, etc.

SUMMARY

The technology disclosed in this patent document includes memorycircuits and devices, as well as their applications in electronicdevices or systems. In various implementations, a memory circuit ismanufactured using a simplified process that prevents defects fromoccurring in the memory circuit.

In an implementation, an electronic device may be provided. Theelectronic device may include a semiconductor memory. The semiconductormemory may include: a first line; a second line being spaced apart fromthe first line and extending in a direction that crosses the first line;a third line being spaced apart from the second line and extending in adirection that crosses the second line; a first variable resistanceelement interposed between the first line and the second line, the firstvariable resistance element overlapping an intersection of the firstline and the second line; a second variable resistance elementinterposed between the second line and the third line, the secondvariable resistance element overlapping an intersection of the secondline and the third line, a part of the second variable resistanceelement being configured to generate a greater amount of heat than apart of the first variable resistance element when a direction of acurrent flowing through the first variable resistance element isopposite to a direction of a current flowing through the second variableresistance element; and a material layer connected in series with thesecond variable resistance element and disposed between the second lineand the third line, the material layer exhibiting an electricalresistance.

Implementations of the above device may include one or more thefollowing.

The material layer includes an insulating material having a sufficientthickness to exhibit the electrical resistance. The insulating materialincludes a metal oxide, a silicon oxide, a silicon nitride, or acombination thereof. The material layer is amorphous. A surface of thematerial layer is in contact with a first surface of the second variableresistance element and the surface of the material layer has a largersize than the first surface of the second variable resistance element.The material layer has a line shape that overlaps the second line, thethird line, or both. The material layer has a flat plate shape. Thedirection of the current flowing through the second variable resistanceelement is a direction from the second line toward the third line, andthe material layer is interposed between the second variable resistanceelement and the second line. The direction of the current flowingthrough the second variable resistance element is a direction from thethird line toward the second line, and the material layer is interposedbetween the second variable resistance element and the third line. Thefirst variable resistance element has substantially the samemulti-layered structure as the second variable resistance element. Thefirst variable resistance element includes a first variable resistancelayer, a first electrode layer in contact with a first surface of thefirst variable resistance layer, and a second electrode layer in contactwith a second surface of the first variable resistance layer, whereinthe second variable resistance element includes a second variableresistance layer, a third electrode layer in contact with a firstsurface of the second variable resistance layer, and a fourth electrodelayer in contact with a second surface of the second variable resistancelayer, and wherein the first electrode layer and the third electrodelayer include a first material, and the second electrode layer and thefourth electrode layer include a second material that has a differentresistance from the first material. The first variable resistanceelement further includes a first selection element layer that iselectrically coupled to the first variable resistance layer, the firstelectrode layer or the second electrode layer being disposed between thefirst variable resistance layer and the first selection element layer,and wherein the second variable resistance element further includes asecond selection element layer that is electrically coupled to thesecond variable resistance layer, the third electrode layer or thefourth electrode layer being disposed between the second selectionelement layer and the second variable resistance layer. Thesemiconductor memory further includes: an additional material layerdisposed over a sidewall of the second variable resistance element, theadditional material connecting the second line and the third line andincluding the same material as the material layer. The additionalmaterial layer is electrically insulative.

In another implementation, an electronic device may be provided. Theelectronic device may include a semiconductor memory. The semiconductormemory may include: a first line extending in a first direction; asecond line extending in a second direction crossing the firstdirection; a third line extending in the first direction; a firstvariable resistance element coupled between the first line and thesecond line; a second variable resistance element coupled between thesecond line and the third line, a part of the second variable resistanceelement being configured to generate a greater amount of heat than apart of the first variable resistance element when a direction of acurrent flowing through the first variable resistance element isopposite to a direction of a current flowing through the second variableresistance element; and an additional resistance component coupled inseries to the second variable resistance element and disposed betweenthe second line and the third line, the additional resistance componentreducing a current flowing through the second variable resistanceelement.

Implementations of the above device may include one or more thefollowing.

During operating the semiconductor memory, a current through the firstvariable resistance element flows in a direction from the second linetoward the first line, a current through the second variable resistanceelement flows in a direction from the second line toward the third line,and the additional resistance component is coupled between the secondline and the second variable resistance element. During operation of thesemiconductor memory, a current through the first variable resistanceelement flows in a direction from the first line toward the second line,a current through the second variable resistance element flows in adirection from the third line toward the second line, and the additionalresistance component is coupled between the third line and the secondvariable resistance element.

In another implementation, an electronic device may be provided. Theelectronic device may include a semiconductor memory. The semiconductormemory may include: a first line; a second line being spaced apart fromthe first line and extending in a direction crossing the first line; athird line being spaced apart from the second line and extending in adirection crossing the second line; a first variable resistance elementinterposed between the first line and the second line, the firstvariable resistance element overlapping an intersection of the firstline and the second line and including a first electrode layer, a firstvariable resistance layer, and a second electrode layer, which arestacked in a direction from the first line toward the second line; asecond variable resistance element interposed between the second lineand the third line, the second variable resistance element overlappingan intersection of the second line and the third line and including athird electrode layer, a second variable resistance layer, and a fourthelectrode layer, which are stacked in a direction from the second linetoward the third line, where a difference in Seebeck coefficientsbetween a material of the first and third electrode layers and amaterial of the first and second variable resistance layers is differentfrom a difference in Seebeck coefficients between a material of thesecond and fourth electrode layers and the material of the first andsecond variable resistance layers; and a material layer coupled inseries to the second variable resistance element and disposed betweenthe second line and the third line, the material layer having anelectrical resistance.

Implementations of the above device may include one or more thefollowing.

The difference in the Seebeck coefficients between the material of thefirst and third electrode layers and the material of the first andsecond variable resistance layers is smaller than the difference in theSeebeck coefficients between the material of the second and fourthelectrode layers and the material of the first and second variableresistance layers, wherein a current flows through the first variableresistance element in a direction from the second line to the first lineand a current flows through the second variable resistance element in adirection from the second line toward the third line, and wherein thematerial layer is interposed between the second line and the secondvariable resistance element. The difference in the Seebeck coefficientsbetween the material of the first and third electrode layers and thematerial of the first and second variable resistance layers is largerthan the difference in the Seebeck coefficients between the material ofthe second and fourth electrode layers and the material of the first andsecond variable resistance layers, wherein a current flows through thefirst variable resistance element in a direction from the second linetoward the first line and a current flows through the second variableresistance element in a direction from the second line toward the thirdline, and wherein the material layer is interposed between the secondline and the first variable resistance element. The difference in theSeebeck coefficients between the material of the first and thirdelectrode layers and the material of the first and second variableresistance layers is smaller than the difference in the Seebeckcoefficients between the material of the second and fourth electrodelayers and the material of the first and second variable resistancelayers, wherein a current flows through the first variable resistanceelement in a direction from the first line to the second line and acurrent flows through the second variable resistance element in adirection from the third line toward the second line, and wherein thematerial layer is interposed between the first line and the firstvariable resistance element. The difference in the Seebeck coefficientsbetween the material of the first and third electrode layers and thematerial of the first and second variable resistance layers is largerthan the difference in the Seebeck coefficients between the material ofthe second and fourth electrode layers and the material of the first andsecond variable resistance layers, wherein a current flows through thefirst variable resistance element in a direction from the first linetoward the second line and a current flows through the second variableresistance element from the third line toward the second line, and thematerial layer is interposed between the third line and the secondvariable resistance element. The material layer includes an insulatingmaterial having a sufficient thickness to exhibit the electricalresistance. The insulating material includes a metal oxide, a siliconoxide, a silicon nitride, or a combination thereof. The material layeris amorphous. A surface of the material layer is in contact with a firstsurface, the first surface being a surface of the second variableresistance element or a surface of the first variable resistanceelement, the surface of the material layer having a larger size than thefirst surface. The material layer has a line shape that overlaps thefirst line, the second line, the third line, or a combination thereof.The material layer has a flat plate shape. The first electrode layer andthe third electrode layer include the same material, the secondelectrode layer and the fourth electrode layer include the samematerial, and the first variable resistance layer and the secondresistance layer include the same material. The first variableresistance element further includes a first selection element layer thatis electrically coupled to the first variable resistance layer, thefirst electrode layer or the second electrode layer being disposedbetween the first selection element layer and the first variableresistance layer, and wherein the second variable resistance elementfurther includes a second selection element layer that is electricallycoupled to the second variable resistance layer, the third electrodelayer or the fourth electrode layer being disposed between the secondselection element layer and the second variable resistance layer. Thesemiconductor memory further includes: an additional material layerdisposed over a sidewall of the second variable resistance element, andconnecting the second line and the third line, or the additionalmaterial layer disposed over a sidewall of the first variable resistanceelement and connecting the first line and the second line, theadditional material layer including the same material as the materiallayer. The additional material layer is electrically insulative.

In another implementation, an electronic device may be provided. Theelectronic device may include a semiconductor memory. The semiconductormemory may include: a first line; a second line spaced apart from thefirst line, the second line extending in a direction that crosses thefirst line; a third line spaced apart from the second line, the thirdline extending in a direction that crosses the second line; a firstvariable resistance element interposed between the first line and thesecond line, the first variable resistance element overlapping anintersection of the first line and the second line and having amulti-layered structure including a first variable resistance layer; asecond variable resistance element interposed between the second lineand the third line, the second variable resistance element overlappingan intersection of the second line and the third line and having amulti-layered structure including a second variable resistance layer;and a material layer having an electrical resistance, wherein thematerial layer is interposed between the second variable resistanceelement and one of the second line and the third line, and wherein acurrent flow path to the second variable resistance layer is longer thana current flow path to the first variable resistance layer.

Implementations of the above device may include one or more thefollowing.

The material layer includes an insulating material having a sufficientthickness to exhibit the electrical resistance. The insulating materialincludes a metal oxide, a silicon oxide, a silicon nitride, or acombination thereof. The material layer is amorphous. A surface of thematerial layer is in contact with a first surface of the second variableresistance element, the surface of the material layer having a largersize than the first surface. The material layer has a line shape thatoverlaps the second line, the third line, or both. The material layerhas a flat plate shape. During operating the semiconductor memory, adirection of a current flowing through the first variable resistanceelement is opposite to a direction of a current flowing through thesecond variable resistance element. The direction of the current flowingthrough the second variable resistance element is a direction from thesecond line toward the third line, and wherein the material layer isinterposed between the second variable resistance element and the secondline. The direction of the current flowing through the second variableresistance element is a direction from the third line toward the secondline, and wherein the material layer is interposed between the secondvariable resistance element and the third line. The semiconductor memoryfurther includes: an additional material layer disposed over a sidewallof the second variable resistance element, the additional material layerconnecting the second line and the third line and including the samematerial as the material layer. The additional material layer iselectrically insulative.

In another implementation, an electronic device may be provided. Theelectronic device may include a semiconductor memory. The semiconductormemory may include: a first line; a second line being spaced apart fromthe first line and extending in a direction that crosses the first line;a third line being spaced apart from the second line and extending in adirection that crosses the second line; a first variable resistanceelement interposed between the first line and the second line, the firstvariable resistance element overlapping an intersection of the firstline and the second line and including a first phase change material; asecond variable resistance element interposed between the second lineand the third line, the second variable resistance element overlappingan intersection of the second line and the third line and including asecond phase change material, a magnitude of a current required for aphase change of the second phase change material being smaller than amagnitude of a current required for a phase change of the first phasechange material when a direction of a current flowing through the firstvariable resistance element is opposite to a direction of a currentflowing through the second variable resistance element; and a materiallayer connected in series with the second variable resistance elementand disposed between the second line and the third line, the materiallayer exhibiting an electrical resistance.

The electronic device may further include a microprocessor whichincludes: a control unit configured to receive a signal including acommand from an outside of the microprocessor, and performs extracting,decoding of the command, or controlling input or output of a signal ofthe microprocessor; an operation unit configured to perform an operationbased on a result that the control unit decodes the command; and amemory unit configured to store data for performing the operation, datacorresponding to a result of performing the operation, or an address ofdata for which the operation is performed, wherein the semiconductormemory is part of the memory unit in the microprocessor.

The electronic device may further include a processor which includes: acore unit configured to perform, based on a command inputted from anoutside of the processor, an operation corresponding to the command, byusing data; a cache memory unit configured to store data for performingthe operation, data corresponding to a result of performing theoperation, or an address of data for which the operation is performed;and a bus interface connected between the core unit and the cache memoryunit, and configured to transmit data between the core unit and thecache memory unit, wherein the semiconductor memory is part of the cachememory unit in the processor.

The electronic device may further include a processing system whichincludes: a processor configured to decode a command received by theprocessor and control an operation for information based on a result ofdecoding the command; an auxiliary memory device configured to store aprogram for decoding the command and the information; a main memorydevice configured to call and store the program and the information fromthe auxiliary memory device such that the processor can perform theoperation using the program and the information when executing theprogram; and an interface device configured to perform communicationbetween at least one of the processor, the auxiliary memory device andthe main memory device and the outside, wherein the semiconductor memoryis part of the auxiliary memory device or the main memory device in theprocessing system.

The electronic device may further include a data storage system whichincludes: a storage device configured to store data and conserve storeddata regardless of power supply; a controller configured to controlinput and output of data to and from the storage device according to acommand inputted form an outside; a temporary storage device configuredto temporarily store data exchanged between the storage device and theoutside; and an interface configured to perform communication between atleast one of the storage device, the controller and the temporarystorage device and the outside, wherein the semiconductor memory is partof the storage device or the temporary storage device in the datastorage system.

The electronic device may further include a memory system whichincludes: a memory configured to store data and conserve stored dataregardless of power supply; a memory controller configured to controlinput and output of data to and from the memory according to a commandinputted form an outside; a buffer memory configured to buffer dataexchanged between the memory and the outside; and an interfaceconfigured to perform communication between at least one of the memory,the memory controller and the buffer memory and the outside, wherein thesemiconductor memory is part of the memory or the buffer memory in thememory system.

These and other aspects, implementations, and associated advantages aredescribed in greater detail in the drawings, the description, and theclaims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a perspective view illustrating a memory device according toan implementation of the disclosed technology.

FIG. 1B is a cross-sectional view taken along a line A-A′ and a lineB-B′ of FIG. 1A according to an implementation of the disclosedtechnology.

FIG. 1C is an enlarged view of a portion P1 of FIG. 1B according to animplementation of the disclosed technology.

FIG. 1D is a circuit diagram corresponding to the memory device of FIGS.1A and 1B according to an implementation of the disclosed technology.

FIG. 2A is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

FIG. 2B is a cross-sectional view illustrating a memory device accordingto san implementation of the disclosed technology.

FIG. 2C is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

FIG. 3A is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

FIG. 3B is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

FIG. 4 is an example of configuration diagram of a microprocessorimplementing memory circuitry according to an implementation of thedisclosed technology.

FIG. 5 is an example of configuration diagram of a processorimplementing memory circuitry according to an implementation of thedisclosed technology.

FIG. 6 is an example of configuration diagram of a system implementingmemory circuitry according to an implementation of the disclosedtechnology.

FIG. 7 is an example of configuration diagram of a data storage systemimplementing memory circuitry according to an implementation of thedisclosed technology.

FIG. 8 is an example of configuration diagram of a memory systemimplementing memory circuitry according to an implementation of thedisclosed technology.

DETAILED DESCRIPTION

Various examples and implementations of the disclosed technology aredescribed below in detail with reference to the accompanying drawings.

The drawings may not be necessarily to scale and in some instances,proportions of at least some of structures in the drawings may have beenexaggerated in order to clearly illustrate certain features of variousexamples or implementations. In presenting a specific example in adrawing or description having two or more layers in a multi-layerstructure, the relative positioning relationship of such layers, or thesequence of arranging the layers, as shown, reflects a particularimplementation for the described or illustrated example, and a differentrelative positioning relationship or sequence of arranging the layersmay be possible in accordance with other implementations. In addition, adescribed or illustrated example of a multi-layer structure may notreflect all layers present in that particular multilayer structure(e.g., one or more additional layers may be present between twoillustrated layers). As a specific example, when a first layer in adescribed or illustrated multi-layer structure is referred to as being“on” or “over” a second layer or “on” or “over” a substrate, the firstlayer may be directly formed on the second layer or the substrate, butmay also represent a structure where one or more other intermediatelayers may exist between the first layer and the second layer or thesubstrate.

FIG. 1A is a perspective view illustrating a memory device according toan implementation of the disclosed technology, FIG. 1B is across-sectional view taken along a line A-A′ and a line B-B′ of FIG. 1Aaccording to an implementation of the disclosed technology, and FIG. 1Cis an enlarged view of a portion P1 of FIG. 1B according to animplementation of the disclosed technology.

Referring to FIGS. 1A and 1B, the memory device according to the presentimplementation may include a first stack structure ST1 and a secondstack structure ST2. The first stack structure ST1 may include firstword lines 110, which are disposed over a substrate 100 and extend in afirst direction; common bit lines 130, which are disposed over the firstword lines 110 and extend in a second direction that crosses the firstword lines 110, for example, a direction that is substantiallyperpendicular to the first word lines 110; and first variable resistanceelements 120, which are interposed between the first word lines 110 andthe common bit lines 130 and overlap intersections of the first wordlines 110 and the common bit lines 130. In an example, the common bitlines 130 extending in the second direction are substantiallyperpendicular to the first word lines 110 extending in the firstdirection.

The second stack structure ST2 may include the common bit lines 130;second word lines 150, which are disposed over the common bit lines 130and extend in the first direction; and second variable resistanceelements 140, which are interposed between the common bit lines 130 andthe second word lines 150 and overlap intersections of the common bitlines 130 and the second word lines 150. The second stack structure ST2may further include a material layer 170 that is interposed between thecommon bit lines 130 and the second variable resistance elements 140.

The first word lines 110 and the common bit lines 130 may be coupled tolower ends and upper ends of the first variable resistance elements 120,respectively, and may supply a current or voltage to the first variableresistance elements 120. The common bit lines 130 and the second wordlines 150 may be coupled to lower ends and upper ends of the secondvariable resistance elements 140, respectively, and may supply a currentor voltage to the second variable resistance elements 140. The commonbit lines 130 may be shared by the first stack structure ST1 and thesecond stack structure ST2, and may be used simultaneously for drivingthe first stack structure ST1 and the second stack structure ST2. Thefirst word lines 110, the common bit lines 130, and the second wordlines 150 may each have a single-layered structure or multi-layeredstructure. The first word lines 110, the common bit lines 130, and thesecond word lines 150 may each include various conductive materials, forexample, a metal, such as any of Pt, Ir, Ru, Al, Cu, W, Ti, Ta, and thelike; a metal nitride, such as any of TiN, TaN, WN, MoN, and the like;or a combination thereof.

Each of the first and second variable resistance elements 120 and 140may include a material that switches between different resistance statesaccording to an applied current or voltage, e.g., a current or voltagesupplied to both of its ends. Each of the first and second variableresistance elements 120 and 140 thereby functions as a memory cell thatcan store different levels of data.

As an example, the first variable resistance element 120 may have astacked structure, which includes a first lower electrode layer 121, afirst selection element layer 123, a first middle electrode layer 125, afirst variable resistance layer 127, and a first upper electrode layer129 that are stacked in a third direction that is perpendicular to thefirst and second directions.

The first lower electrode layer 121 may be located at the lowermostportion of the first variable resistance element 120, and may provide aconnection between the first word line 110 and the first variableresistance element 120. The first lower electrode layer 121 may have asingle-layered structure or multi-layered structure, and may include alow-resistance conductive material, such as a metal, a metal nitride, ora combination thereof.

The first selection element layer 123 may have a threshold switchingcharacteristic. That is, the first selection element layer 123 blocks acurrent when a magnitude of a voltage supplied between an upper end anda lower end of the first selection element layer 123 is lower than apredetermined threshold voltage, and conducts a current when themagnitude of the voltage is equal to or greater than the predeterminedthreshold voltage. Accordingly, the first selection element layer 123controls access to the first variable resistance layer 127.

The first selection element layer 123 may include a diode; an ovonicthreshold switching (OTS) material, such as a chalcogenide-basedmaterial; a mixed ion-electron conducting (MIEC) material, such as ametal-containing chalcogenide-based material; a metal insulatortransition (MIT) material, such as any of NbO₂, VO₂, and the like; atunneling dielectric layer that has a relatively wide band gap andincludes any of SiO₂, Al₂O₃, and the like; or a combination thereof.

The first middle electrode layer 125 may physically separate the firstselection element layer 123 and the first variable resistance layer 127,and may electrically connect the first selection element layer 123 tothe first variable resistance layer 127. The first middle electrodelayer 125 may include a different material than the first lowerelectrode layer 121 and/or the first upper electrode layer 129. Forexample, the first middle electrode layer 125 may include a conductivematerial having a higher resistance than a conductive material of thefirst lower electrode layer 121 and/or the first upper electrode layer129.

The first variable resistance layer 127 may have a switchingcharacteristic. That is, the first variable resistance layer 127switches between different resistance states according to a voltage orcurrent supplied between an upper end and a lower end of the firstvariable resistance layer 127. As an example, the first variableresistance layer 127 may have a single-layered structure ormulti-layered structure, and may include a material used for any of anRRAM, a PRAM, an FRAM, an MRAM, and the like. In some examples, thefirst variable resistance layer 127 includes any of a metal oxide, suchas a transition metal oxide or a perovskite-based material; a phasechange material, such as a chalcogenide-based material; a ferroelectricmaterial; a ferromagnetic material; and so on.

The first upper electrode layer 129 may be located at the uppermostportion of the first variable resistance element 120, and may provide aconnection between the common bit line 130 and the first variableresistance element 120. The first upper electrode layer 129 may have asingle-layered structure or multi-layered structure, and may include alow-resistance conductive material, such as a metal, a metal nitride, ora combination thereof.

The second variable resistance element 140 may have substantially thesame structure as the first variable resistance element 120. As anexample, the second variable resistance element 140 may have a stackedstructure, which includes a second lower electrode layer 141, a secondselection element layer 143, a second middle electrode layer 145, asecond variable resistance layer 147, and a second upper electrode layer149 that are stacked in the third direction. The second lower electrodelayer 141, the second selection element layer 143, the second middleelectrode layer 145, the second variable resistance layer 147, and thesecond upper electrode layer 149 may have the same materials andsubstantially the same thicknesses as the first lower electrode layer121, the first selection element layer 123, the first middle electrodelayer 125, the first variable resistance layer 127, and the first upperelectrode layer 129, respectively.

In an implementation, each of the first variable resistance elements 120may have an island shape, and may be located at each intersection of thefirst word lines 110 and the common bit lines 130. Each of the secondvariable resistance elements 140 may have an island shape, and may belocated at each intersection of the common bit lines 130 and the secondword lines 150. However, the shapes of the first and second variableresistance elements 120 and 140 may be variously modified, as long asthe first and second variable resistance elements 120 and 140 overlapwith the intersections of the first word lines 110 and the common bitlines 130 and with the intersections of the common bit lines 130 and thesecond word lines 150.

In some implementations, each of the first variable resistance elements120 may have a line shape overlapping each of the first word lines 110,or another line shape overlapping each of the common bit lines 130, ormay have a flat plate shape overlapping all of the first word lines 110and the common bit lines 130. Each of the second variable resistanceelements 140 may have a line shape overlapping each of the second wordlines 150, or another line shape overlapping each of the common bitlines 130, or may have a flat plate shape overlapping all of the secondword lines 150 and the common bit lines 130.

The material layer 170 may include an insulating material having a highdielectric constant, for example, a metal oxide, such as any of Al₂O₃,TiO₂, HfO₂, ZrO₂, and the like; a silicon oxide; a silicon nitride; or acombination thereof. The material layer 170 may be thin, and may show anohmic behavior. That is, the material layer 170 may have an electricalresistance, such that a current flowing through the material layer 170may vary in proportion to a voltage applied to the material layer 170,which may depend on an operating current or voltage of the presentsemiconductor memory. Even when the material layer 170 includes aninsulating material, the material layer 170 may leak current, as long asthe material layer 170 is relatively thin. As an example, the thicknessof the material layer 170 may be 1 nanometers (nm) or more and may be 3nm or less. Thus, the material layer 170 may reduce a current flowingthrough the material layer 170, without completely blocking the current.

The material layer 170 may be amorphous. In this case, a crystal growthof a layer formed over the material layer 170, for example, the secondlower electrode layer 141 of the second variable resistance element 140,may be unaffected by the structure of the material layer 170.

In an implementation, the material layer 170 may be omitted from thefirst stack structure ST1, but may be included in the second stackstructure ST2. In particular, the material layer 170 may be disposedbetween the common bit line 130 and the second variable resistanceelements 140. The reason for the material layer 170 may be as follows.

The first stack structure ST1 and the second stack structure ST2 sharethe common bit line 130. A direction of a current flowing through thefirst variable resistance element 120 may be opposite to a direction ofa current flowing through the second variable resistance element 140,when the first stack structure ST1 and the second stack structure ST2are being operated. For example, as shown by a dashed-line arrow in FIG.1B, the current flowing through the first variable resistance element120 may flow in a downward direction from the common bit line 130 to thefirst word line 110, while the current flowing through the secondvariable resistance element 140 may flow in an upward direction from thecommon bit line 130 to the second word line 150.

Although the first variable resistance element 120 and the secondvariable resistance element 140 have similar stacked structures, one ofthe first and second variable resistance elements 120 and 140 may bemore vulnerable to heat, compared to the other of the first and secondvariable resistance elements 120 and 140, when the semiconductor memoryis being operated.

As an example, the second variable resistance element 140 may be morevulnerable to heat during operation of the semiconductor memory than thefirst variable resistance element 120. The second variable resistanceelement 140 may be more vulnerable to heat than the first variableresistance element 120 due to the arrangement and constituent materialsof layers in the memory device. That is, when the first and secondvariable resistance layers 127 and 147 include a phase change material,such as GST, a temperature at a bottom portion of the first variableresistance layer 127, that is, at a first interface I1 between the firstvariable resistance layer 127 and the first middle electrode layer 125,may be lower than a temperature at a top portion of the second variableresistance layer 147, that is, at a second interface 12 between thesecond variable resistance layer 147 and the second upper electrodelayer 149, when the current flowing into the first variable resistancelayer 127 has the same magnitude as the current flowing into the secondvariable resistance layer 147. Specifically, when the first and secondupper electrode layers 129 and 149 include a material having lowerresistance than the first and second middle electrode layers 125 and145, such as a metal or a metal nitride, a larger amount of heat may begenerated at the interfaces between the first and second variableresistance layers 127 and 147 and the first and second upper electrodelayers 129 and 149, compared to the interfaces between the first andsecond variable resistance layers 127 and 147 and the first and secondmiddle electrode layers 125 and 145. The larger amount of heat generatedat the interfaces between the first and second variable resistancelayers 127 and 147 and the first and second upper electrode layers 129and 149 is because of a larger difference in Seebeck coefficientsbetween GST and the relatively low resistance conductive material of thefirst and second upper electrode layers 129 and 149, compared to adifference in Seebeck coefficients between GST and the relatively highresistance conductive material of the first and second middle electrodelayers 125 and 145.

Without the material layer 170, the second interface 12 may be morelikely to be damaged by heat during operation of the memory device,because more heat is generated at the second interface 12 compared tothe first interface I1 when the same magnitude of current flows throughthe first and second variable resistance layers 127 and 147.Specifically, a burst phenomenon may occur at the second interface 12due to the greater amount of heat generated at the second interface 12.When the burst phenomenon occurs at the second interface 12, defects mayoccur in the second variable resistance element 140.

Also, in the above case that the direction of the current flowingthrough the first variable resistance element 120 is opposite to thedirection of the current flowing through the second variable resistanceelement 140 during operating the first stack structure ST1 and thesecond stack structure ST2, a magnitude of a current required for thephase change of the first variable resistance layer 127 and a magnitudeof a current required for the phase change of the second variableresistance layer 147 may be different from each other although the firstvariable resistance element 120 and the second variable resistanceelement 140 have the same stacked structure and the first variableresistance layer 127 and the second variable resistance layer 147 havethe same phase change material. This is because the magnitude of thecurrent required for the phase change increases or decreases dependingon a polarity of an applied current even if the same phase changematerial is used. For example, the magnitude of the current required forthe phase change of the second variable resistance layer 147 may besmaller than the magnitude of the current required for the phase changeof the first variable resistance layer 127, depending on the differencein the current direction. Therefore, if the material layer 170 is notpresent, a failure may occur in which a phase change of the secondvariable resistance layer 147 unintentionally occurs in a state where asmall current, for example, a read current is applied.

In the present implementation, to prevent the occurrence of the abovedefects, the material layer 170 may be disposed between the common bitline 130 and the second variable resistance element 140, so that amagnitude of a current flowing from the common bit line 130 to thesecond variable resistance element 140 may be lower than a magnitude ofa current flowing from the common bit line 130 to the first variableresistance element 120. As a result, the greater heat generation at thesecond interface 12 may be reduced, and the burst phenomenon at thesecond interface 12 may be prevented.

In the present implementation, the material layer 170 may overlap thecommon bit line 130 and have substantially the same shape as the commonbit line 130. That is, the material layer 170 may have a line shapeextending in the second direction. However, as long as the materiallayer 170 is interposed between the common bit line 130 and the secondvariable resistance element 140, the shape of the material layer 170 maybe variously modified.

Meanwhile, an example of a method for fabricating the memory device ofFIGS. 1A and 1B will be described below.

First, the first word lines 110 extending in the first direction may beformed by depositing a conductive material over the substrate 100, inwhich a predetermined lower structure (not shown) is formed, andselectively etching the conductive material. Then, a first interlayerinsulating layer ILD1 filled between the first word lines 110 may beformed by forming an insulating material covering the first word lines110 and the substrate 100 and performing a planarization process, forexample, a Chemical Mechanical Polishing (CMP) process, until the firstword lines 110 are exposed.

Then, the first variable resistance elements 120 may be formed bydepositing a plurality of layers over the first interlayer insulatinglayer ILD1 and the first word lines 110, and selectively etching theplurality of layers. Then, a second interlayer insulating layer ILD2 maybe formed between the first variable resistance elements 120.

Subsequently, stack structures, each including the common bit line 130and the material layer 170, may be formed by sequentially depositing aconductive material and an insulating material over the secondinterlayer insulating layer ILD2 and the first variable resistanceelements 120, and selectively etching the conductive material and theinsulating material. The stack structure of the common bit line 130 andthe material layer 170 may extend in the second direction and be coupledto the first variable resistance elements 120 arranged in the seconddirection. Then, a third interlayer insulating layer ILD3 may be formedbetween the stack structures of the common bit line 130 and the materiallayer 170.

Then, the second variable resistance elements 140 arranged in the firstdirection and the second direction and located over the stack structuresof the common bit line 130 and the material layer 170 may be formed bydepositing a plurality of layers over the third interlayer insulatinglayer ILD3 and the stack structures of the common bit line 130 and thematerial layer 170, and selectively etching the plurality of layers.Then, a fourth interlayer insulating layer ILD4 may be formed betweenthe second variable resistance elements 140.

When the plurality of layers are being etched to form the secondvariable resistance elements 140, an over etching may be performed, inorder to completely separate the second variable resistance elements 140from each other. As a result of the over etching, a portion of thematerial layer 170 exposed by the second variable resistance element 140may be etched to a predetermined thickness. As shown in FIG. 1C, a firstthickness T1 of a portion of the material layer 170 that is exposed bythe second variable resistance element 140, may be smaller than a secondthickness T2 of a portion of the material layer 170 that overlaps thesecond variable resistance element 140.

Also, during the etching process for forming the second variableresistance element 140, a process, in which etch by-products areredeposited on a sidewall of a layer being etched and are re-etched, maybe repeated. As a result, etch by-products 172 resulting from the mostrecently etched layer may be deposited over a sidewall of the secondvariable resistance element 140. In the present implementation, the mostrecently etched layer may be the material layer 170, so the etchby-products 172 deposited on the sidewall of the second variableresistance element 140 may be due to etching the material layer 170.Since the material layer 170 includes an insulating material, the etchby-products 172 may prevent current leakage, even when no additionaloxidation process is performed on the sidewall of the second variableresistance element 140. For this purpose, a surface of the materiallayer 170 may be in contact with a bottom surface of the second variableresistance element 140, but may have a larger size than the bottomsurface of the second variable resistance element 140.

Referring again to FIGS. 1A and 1B, the second word lines 150 may beformed by depositing a conductive material over the fourth interlayerinsulating layer ILD4 and the second variable resistance elements 140,and selectively etching the conductive material.

Accordingly, the memory device of FIGS. 1A and 1B may be fabricated.According to the memory device of FIGS. 1A and 1B and the fabricatingmethod described above, it may be possible to prevent defects from beingformed in the memory device, simplify processes for manufacturing thememory device, and reduce the cost of the memory device.

Specifically, in a case in which the first variable resistance element120 and the second variable resistance element 140 have the same shape,if the material layer 170 is omitted, one of the first variableresistance element 120 and the second variable resistance element 140may be defective due to an asymmetry of heat generation by an asymmetryin the directions of currents flowing through the memory device.However, according to the present implementation, this defect may beprevented by including the material layer 170, which is capable ofreducing a current flowing into one of the first stack structure ST1 andthe second stack structure ST2 and therefore of reducing an amount ofheat generated through one of the first stack structure ST1 and thesecond stack structure ST2.

Also, when the material layer 170 includes an insulating material and islocated under the second variable resistance element 140, the etchby-products 172 redeposited over the sidewall of the second variableresistance element 140 may have an insulating property. That is, theetch by-products 172 are electrically insulative. Therefore, there maybe no need for performing an additional oxidation process on thesidewall of the second variable resistance element 140, which simplifiesand reduces the cost of the method of fabricating the memory device.

FIG. 1D is a circuit diagram corresponding to the memory deviceillustrated in FIGS. 1A through 1C according to an implementation of thedisclosed technology.

Referring to FIG. 1D, the circuit diagram includes first word lines WL1extending in a first direction, second word lines WL2 extending in thefirst direction, and common bit lines CBL extending in a seconddirection that is perpendicular to the first direction.

A first variable resistance element R1 may be connected between each ofthe first word lines WL1 and each of the common bit lines CBL, and asecond variable resistance element R2 may be connected between each ofthe second word lines WL2 and each of the common bit lines CBL. That is,first and second ends of each first variable resistance element R1 maybe coupled to one of the first word lines WL1 and one of the common bitlined CBL, respectively, and first and second ends of each secondvariable resistance element R2 may be coupled to one of the second wordlines WL2 and one of the common bit lines CBL, respectively.

When the second variable resistance element R2 is more vulnerable toheat than the first variable resistance element R1 during operation ofthe memory device, an additional resistance component R′ may beconnected in series to one end of the second variable resistance elementR2. The additional resistance component R′ may reduce a current thatflows through the second variable resistance element R2. In the presentimplementation, a current may flow from the common bit line CBL towardthe first and second word lines WL1 and WL2. The additional resistancecomponent R′ connected between the common bit line CBL and the secondvariable resistance element R2 may reduce a current flowing from thecommon bit line CBL toward the second variable resistance element R2.Therefore, heat generated in the second variable resistance element R2may be reduced, and heat-generated defects in the second variableresistance element R2 may be prevented.

Although not shown, in another implementation, when the first variableresistance element R1 is more vulnerable to heat than the secondvariable resistance element R2 during operation of the memory device,the additional resistance component R′ may be connected in series to oneend of the first variable resistance element R1. For example, theadditional resistance component R′ may be connected between the commonbit line CBL and the first variable resistance element R1.

Also, although not shown, in an implementation, there may be first andsecond bit lines and a common word line, and currents may flow from thefirst and second bit lines to the common word line through first andsecond variable resistance elements. In this case, an additionalresistance component may be connected between the first variableresistance element, which is more vulnerable to heat than the secondvariable resistance element, and the bit line that is coupled to thefirst variable resistance element.

Meanwhile, as described above, the shape of the material layer 170 canbe variously modified as long as the material layer 170 is interposedbetween the common bit line 130 and the second variable resistanceelement 170. As an example, the material layer 170 may have a flat plateshape. This will be described with reference to FIG. 2A below.

FIG. 2A is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

Referring to FIG. 2A, the memory device according to the presentimplementation may include a first stack structure ST1 and a secondstack structure ST2. The first stack structure ST1 may include firstword lines 210, which are disposed over a substrate 200 and extend in afirst direction; common bit lines 230, which are disposed over the firstword lines 210 and extend in a second direction that crosses the firstword lines 210; and first variable resistance elements 220, which areinterposed between the first word lines 210 and the common bit lines 230and overlap intersections of the first word lines 210 and the common bitlines 230. The common bit lines 230 extending in the second directionare, for example, substantially perpendicular to the first word lines210 extending in the first direction. The second stack structure ST2 mayinclude the common bit lines 230; second word lines 250, which aredisposed over the common bit lines 230 and extend in the firstdirection; and second variable resistance elements 240, which areinterposed between the common bit lines 230 and the second word lines250 and overlap intersections of the common bit lines 230 and the secondword lines 250. Furthermore, the second stack structure ST2 may furtherinclude a material layer 270 that is interposed between the common bitlines 230 and the second variable resistance elements 240.

Here, the material layer 270 may have a flat plate shape. In otherwords, the material layer 270 may be a continuous structure that coversall of the top surfaces of the common bit lines 230 and covers a thirdinterlayer insulating layer ILD3 disposed between the common bit lines230.

In the above implementations of FIGS. 1A to 2A, the second variableresistance elements 140 and 240 may be more vulnerable to heat than thefirst variable resistance elements 120 and 220. However, in anotherimplementation, the first variable resistance elements 120 and 220 maybe more vulnerable to heat than the second variable resistance elements140 and 240. This will be illustratively described with reference toFIGS. 2B and 2C.

FIG. 2B is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

Referring to FIG. 2B, the memory device according to the presentimplementation may include a first stack structure ST1 and a secondstack structure ST2. The first stack structure ST1 may include firstword lines 210, which are disposed over a substrate 200 and extend in afirst direction; common bit lines 230, which are disposed over the firstword lines 210 and extend in a second direction; and first variableresistance elements 220, which are interposed between the first wordlines 210 and the common bit lines 230 and overlap intersections of thefirst word lines 210 and common bit lines 230. The second stackstructure ST2 may include the common bit lines 230; second word lines250, which are disposed over the common bit lines 230 and extend in thefirst direction; and second variable resistance elements 240, which areinterposed between the common bit lines 230 and the second word lines250 and overlap intersections of the common bit lines 230 and the secondword lines 250. Furthermore, the first stack structure ST1 may furtherinclude a material layer 270′ that is interposed between the common bitlines 230 and the first variable resistance elements 220.

Here, a current in the first variable resistance element 220 may flow ina downward direction from the common bit line 230 to the first word line210, while a current in the second variable resistance element 240 flowsin an upward direction from the common bit line 230 to the second wordline 250. Therefore, when the currents are equal, a temperature at abottom portion of the first variable resistance layer 227, that is, atan interface with the first middle electrode layer 225, is higher than atemperature at a top portion of the second variable resistance layer247, that is, at an interface with the second upper electrode layer 249.When the first and second upper electrode layers 229 and 249 include amaterial having higher resistance than the first and second middleelectrode layers 225 and 245, a larger amount of heat may be generatedat the interfaces between the first and second variable resistancelayers 227 and 247 and the first and second middle electrode layers 225and 245, compared to the interfaces between the first and secondvariable resistance layers 227 and 247 and the first and second upperelectrode layers 229 and 249. Accordingly, the interface between thefirst variable resistance layer 227 and the first middle electrode layer225 may be more likely to be damaged by heat during operation of thememory device, compared to the interface between the second variableresistance layer 247 and the second upper electrode layer 249.

However, when the material layer 270′ is interposed between the commonbit line 230 and the first variable resistance element 220, the currentflowing into the first variable resistance element 220 is reduced. As aresult, defects in the first variable resistance layer 227 areprevented.

In the present implementation, the material layer 270′ may be patternedtogether with the common bit line 230, and may have the same line shapeas the common bit line 230. However, unlike the implementation of FIG.1B, the material layer 270′ may be located under the common bit line230. That is, the material layer 270′ may be disposed between the commonbit line 230 and the first variable resistance element 220.Specifically, the material layer 270′ and the common bit line 230 may beformed by sequentially depositing an insulating material correspondingto the material layer 270′ and a conductive material corresponding tothe common bit line 230, and then selectively etching the insulatingmaterial and the conductive material using one mask.

However, as long as the material layer 270′ is interposed between thecommon bit line 230 and the first variable resistance element 220, theshape of the material layer 270′ may be variously modified. For example,the material layer 270′ may have a flat plate shape. This will bedescribed with reference to FIG. 2C.

FIG. 2C is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

Referring to FIG. 2C, a material layer 270″ may have a flat plate shape.In other words, the material layer 270″ may be a continuous structurecovering all of top surfaces of the first variable resistance elements220 and covering a second interlayer insulating layer ILD2 that isdisposed between the first variable resistance elements 220.

FIG. 3A is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

Referring to FIG. 3A, the memory device according to the presentimplementation may include a first stack structure ST1 and a secondstack structure ST2. The first stack structure ST1 may include first bitlines 310, which are disposed over a substrate 300 and extend in a firstdirection; common word lines 330, which are disposed over the first bitlines 310 and extend in a second direction crossing the first direction;and first variable resistance elements 320, which are interposed betweenthe first bit lines 310 and the common word lines 330 and overlapintersections of the first bit lines 310 and the common word lines 330.The common word lines 330 extending in the second direction are, forexample, perpendicular to the first bit lines 310 extending in the firstdirection. The second stack structure ST2 may include the common wordlines 330, second bit lines 350, which are disposed over the common wordlines 330 and extend in the first direction; and second variableresistance elements 340, which are interposed between the common wordlines 330 and the second bit lines 350 and overlap intersections of thecommon word lines 330 and the second bit lines 350. Furthermore, thefirst stack structure ST1 may further include a material layer 370 thatis interposed between the first bit lines 310 and the first variableresistance elements 320.

As an example, the first variable resistance element 320 may have astructure in which a first lower electrode layer 321, a first selectionelement layer 323, a first middle electrode layer 325, a first variableresistance layer 327, and a first upper electrode layer 329 are stacked.The second variable resistance element 340 may have substantially thesame structure as the first variable resistance element 320. That is,the second variable resistance element 340 may have a structure in whicha second lower electrode layer 341, a second selection element layer343, a second middle electrode layer 345, a second variable resistancelayer 347, and a second upper electrode layer 349 are stacked.

Unlike the implementation of FIGS. 1A and 1B described above, the firststack structure ST1 and the second stack structure ST2 may share thecommon word lines 330 in the present implementation. Accordingly, duringoperation of the first stack structure ST1 and the second stackstructure ST2, a direction of a current flowing through the firstvariable resistance element 320 and a direction of a current flowingthrough the second variable resistance element 340 may be the oppositeof the currents described in the implementation of FIGS. 1A and 1B. Forexample, as shown by dotted-line arrows in FIG. 3A, a current in thefirst variable resistance element 320 may flow in an upward directionfrom the first bit line 310 to the common word line 330, while a currentin the second variable resistance element 340 flows in a downwarddirection from the second bit line 350 to the common word line 330.Therefore, even when the first variable resistance element 320 and thesecond variable resistance element 340 have the same stacked structure,one of the first and second variable resistance elements 320 and 340 maybe more vulnerable to heat during operation of the memory device,compared to the other of the first and second variable resistanceelements 320 and 340.

As an example, the first variable resistance element 320 may be morevulnerable to heat than the second variable resistance element 340. Inother words, a temperature at a top portion of the first variableresistance layer 327, that is, at a third interface 13 between the firstvariable resistance layer 327 and the first upper electrode layer 329,may be greater than a temperature at a bottom portion of the secondvariable resistance layer 347, that is, at a fourth interface 14 betweenthe second variable resistance layer 347 and the second middle electrodelayer 343, when the current of the first variable resistance layer 327and the current of the second variable resistance layer 347 have thesame magnitude. Specifically, when the first and second upper electrodelayers 329 and 349 include a material having a lower resistance than thefirst and second middle electrode layers 325 and 345, a larger amount ofheat may be generated at the interfaces between the first and secondvariable resistance layers 327 and 347 and the first and second upperelectrode layers 329 and 349, compared to the interfaces between thefirst and second variable resistance layers 327 and 347 and the firstand second middle electrode layers 325 and 345. Therefore, without thematerial layer 370, the third interface 13 may be more vulnerable toheat during operation of the memory device, compared to the fourthinterface 14, and a burst phenomenon may occur at the third interface13. Due to the burst phenomenon, defects may occur in the first variableresistance element 320.

In an implementation, the material layer 370 may be disposed between thefirst bit line 310 and the first variable resistance element 320, inorder to prevent the occurrence of the defects in the first variableresistance element 320. The material layer 370 reduces the currentflowing from the first bit line 310 to the first variable resistanceelement 320, such that it is lower than the current flowing from thesecond bit line 350 to the second variable resistance element 340.Accordingly, the heat generation at the third interface 13 may bereduced. As a result, the burst phenomenon at the third interface 13,and the defects in the first variable resistance element 320, may beprevented.

In the present implementation, the material layer 370 may overlap thefirst bit line 310 and have substantially the same shape as the firstbit line 310. That is, the material layer 370 may have a line shapeextending in the first direction. However, as long as the material layer370 is interposed between the first bit line 310 and the first variableresistance element 320, the shape of the material layer 370 may bevariously modified. For example, although not shown, the material layer370 may have a flat plate shape.

Also, although not shown in FIG. 3A, in an over etching process forforming the first variable resistance element 320, the material layer370 may be etched to a predetermined thickness. Therefore, a thicknessof a portion of the material layer 370 that is exposed by the firstvariable resistance element 320 may be smaller than a thickness ofanother portion of the material layer 370 that overlaps the firstvariable resistance element 320. Over a sidewall of the first variableresistance element 320, a sidewall spacer (not shown), which includessubstantially the same insulating material as the material layer 370,may be formed.

FIG. 3B is a cross-sectional view illustrating a memory device accordingto an implementation of the disclosed technology.

Referring to FIG. 3B, unlike the implementation of FIG. 3A, the secondvariable resistance element 340 may be more vulnerable to heat than thefirst variable resistance element 320 during operation of the memorydevice, and the material layer 370′ may be interposed between the secondbit line 350 and the second variable resistance element 340, in order toreduce a current flowing from the second bit line 350 to the secondvariable resistance element 340. In this case, the material layer 370′may have a line shape, which overlaps the second bit line 350.Alternatively, although not shown, the material layer 370′ may have aflat plate shape that covers all of the top surfaces of the secondvariable resistance elements 340 and a fourth interlayer insulatinglayer ILD4 disposed between the second variable resistance elements 340.

While various implementations have been described, the presentdisclosure is not limited thereto. When two or more stack structuressharing a line exist, and a variable resistance element of any one ofthe stack structures is more vulnerable to heat compared to a variableresistance element of another one of the stack structures duringoperation of the stack structures, various implementations may possible,as long as an insulating material is interposed between the variableresistance element of the any one of the stack structures and the line.

The above and other memory circuits or semiconductor devices based onthe disclosed technology can be used in a range of devices or systems.FIGS. 4-8 provide some examples of devices or systems that can implementthe memory circuits disclosed herein.

FIG. 4 is an example of configuration diagram of a microprocessorimplementing memory circuitry according to an implementation of thedisclosed technology.

Referring to FIG. 4, a microprocessor 1000 may perform tasks forcontrolling and tuning a series of processes of receiving data fromvarious external devices, processing the data, and outputting processingresults to external devices. The microprocessor 1000 may include amemory unit 1010, an operation unit 1020, a control unit 1030, and soon. The microprocessor 1000 may include various data processing unitssuch as a central processing unit (CPU), a graphic processing unit(GPU), a digital signal processor (DSP), and an application processor(AP).

The memory unit 1010 is a part which stores data in the microprocessor1000, as a processor register, a register, or the like. The memory unit1010 may include a data register, an address register, a floating pointregister and so on. Besides, the memory unit 1010 may include variousregisters. The memory unit 1010 may perform the function of temporarilystoring data for which operations are to be performed by the operationunit 1020, result data of performing the operations and addresses wheredata for performing of the operations are stored.

The memory unit 1010 may include one or more of the above-describedsemiconductor devices in accordance with the implementations.

For example, the memory unit 1010 may include a first line; a secondline spaced apart from the first line and extending in a directioncrossing the first line; a third line spaced apart from the second lineand extending in a direction crossing the second line; a first variableresistance element interposed between the first line and the second lineand overlapping an intersection of the first line and the second line; asecond variable resistance element interposed between the second lineand the third line and overlapping an intersection of the second lineand the third line, the second variable resistance element being morevulnerable to heat generated during operating the semiconductor memory,compared to the first variable resistance element; and a material layerinterposed between the second variable resistance element and the secondline or between the second variable resistance element and the thirdline, and showing an ohmic behavior in an operating current or voltageof the semiconductor memory. Through this, fabricating processes may besimplified and defects may be prevented in the memory unit 1010. As aconsequence, fabricating processes may be simplified and defects may beprevented in the microprocessor 1000.

The operation unit 1020 may perform four arithmetical operations orlogical operations according to results that the control unit 1030decodes commands. The operation unit 1020 may include at least onearithmetic logic unit (ALU) and so on.

The control unit 1030 may receive signals from the memory unit 1010, theoperation unit 1020 and an external device of the microprocessor 1000,perform extraction, decoding of commands, and controlling input andoutput of signals of the microprocessor 1000, and execute processingrepresented by programs.

The microprocessor 1000 according to the present implementation mayadditionally include a cache memory unit 1040 which can temporarilystore data to be inputted from an external device other than the memoryunit 1010 or to be outputted to an external device. In this case, thecache memory unit 1040 may exchange data with the memory unit 1010, theoperation unit 1020 and the control unit 1030 through a bus interface1050.

FIG. 5 is an example of configuration diagram of a processorimplementing memory circuitry according to an implementation of thedisclosed technology.

Referring to FIG. 5, a processor 1100 may improve performance andrealize multi-functionality by including various functions other thanthose of a microprocessor which performs tasks for controlling andtuning a series of processes of receiving data from various externaldevices, processing the data, and outputting processing results toexternal devices. The processor 1100 may include a core unit 1110 whichserves as the microprocessor, a cache memory unit 1120 which serves tostoring data temporarily, and a bus interface 1130 for transferring databetween internal and external devices. The processor 1100 may includevarious system-on-chips (SoCs) such as a multi-core processor, a graphicprocessing unit (GPU) and an application processor (AP).

The core unit 1110 of the present implementation is a part whichperforms arithmetic logic operations for data inputted from an externaldevice, and may include a memory unit 1111, an operation unit 1112 and acontrol unit 1113.

The memory unit 1111 is a part which stores data in the processor 1100,as a processor register, a register or the like. The memory unit 1111may include a data register, an address register, a floating pointregister and so on. Besides, the memory unit 1111 may include variousregisters. The memory unit 1111 may perform the function of temporarilystoring data for which operations are to be performed by the operationunit 1112, result data of performing the operations and addresses wheredata for performing of the operations are stored. The operation unit1112 is a part which performs operations in the processor 1100. Theoperation unit 1112 may perform four arithmetical operations, logicaloperations, according to results that the control unit 1113 decodescommands, or the like. The operation unit 1112 may include at least onearithmetic logic unit (ALU) and so on. The control unit 1113 may receivesignals from the memory unit 1111, the operation unit 1112 and anexternal device of the processor 1100, perform extraction, decoding ofcommands, controlling input and output of signals of processor 1100, andexecute processing represented by programs.

The cache memory unit 1120 is a part which temporarily stores data tocompensate for a difference in data processing speed between the coreunit 1110 operating at a high speed and an external device operating ata low speed. The cache memory unit 1120 may include a primary storagesection 1121, a secondary storage section 1122 and a tertiary storagesection 1123. In general, the cache memory unit 1120 includes theprimary and secondary storage sections 1121 and 1122, and may includethe tertiary storage section 1123 in the case where high storagecapacity is required. As the occasion demands, the cache memory unit1120 may include an increased number of storage sections. That is tosay, the number of storage sections which are included in the cachememory unit 1120 may be changed according to a design. The speeds atwhich the primary, secondary and tertiary storage sections 1121, 1122and 1123 store and discriminate data may be the same or different. Inthe case where the speeds of the respective storage sections 1121, 1122and 1123 are different, the speed of the primary storage section 1121may be largest. At least one storage section of the primary storagesection 1121, the secondary storage section 1122 and the tertiarystorage section 1123 of the cache memory unit 1120 may include one ormore of the above-described semiconductor devices in accordance with theimplementations. For example, the cache memory unit 1120 may include afirst line; a second line spaced apart from the first line and extendingin a direction crossing the first line; a third line spaced apart fromthe second line and extending in a direction crossing the second line; afirst variable resistance element interposed between the first line andthe second line and overlapping an intersection of the first line andthe second line; a second variable resistance element interposed betweenthe second line and the third line and overlapping an intersection ofthe second line and the third line, the second variable resistanceelement being more vulnerable to heat generated during operating thesemiconductor memory, compared to the first variable resistance element;and a material layer interposed between the second variable resistanceelement and the second line or between the second variable resistanceelement and the third line, and showing an ohmic behavior in anoperating current or voltage of the semiconductor memory. Through this,fabricating processes may be simplified and defects may be prevented inthe cache memory unit 1120. As a consequence, fabricating processes maybe simplified and defects may be prevented in the processor 1100.

Although it was shown in FIG. 5 that all the primary, secondary andtertiary storage sections 1121, 1122 and 1123 are configured inside thecache memory unit 1120, it is to be noted that all the primary,secondary and tertiary storage sections 1121, 1122 and 1123 of the cachememory unit 1120 may be configured outside the core unit 1110 and maycompensate for a difference in data processing speed between the coreunit 1110 and the external device. Meanwhile, it is to be noted that theprimary storage section 1121 of the cache memory unit 1120 may bedisposed inside the core unit 1110 and the secondary storage section1122 and the tertiary storage section 1123 may be configured outside thecore unit 1110 to strengthen the function of compensating for adifference in data processing speed. In another implementation, theprimary and secondary storage sections 1121, 1122 may be disposed insidethe core units 1110 and tertiary storage sections 1123 may be disposedoutside core units 1110.

The bus interface 1130 is a part which connects the core unit 1110, thecache memory unit 1120 and external device and allows data to beefficiently transmitted.

The processor 1100 according to the present implementation may include aplurality of core units 1110, and the plurality of core units 1110 mayshare the cache memory unit 1120. The plurality of core units 1110 andthe cache memory unit 1120 may be directly connected or be connectedthrough the bus interface 1130. The plurality of core units 1110 may beconfigured in the same way as the above-described configuration of thecore unit 1110. In the case where the processor 1100 includes theplurality of core unit 1110, the primary storage section 1121 of thecache memory unit 1120 may be configured in each core unit 1110 incorrespondence to the number of the plurality of core units 1110, andthe secondary storage section 1122 and the tertiary storage section 1123may be configured outside the plurality of core units 1110 in such a wayas to be shared through the bus interface 1130. The processing speed ofthe primary storage section 1121 may be larger than the processingspeeds of the secondary and tertiary storage section 1122 and 1123. Inanother implementation, the primary storage section 1121 and thesecondary storage section 1122 may be configured in each core unit 1110in correspondence to the number of the plurality of core units 1110, andthe tertiary storage section 1123 may be configured outside theplurality of core units 1110 in such a way as to be shared through thebus interface 1130.

The processor 1100 according to the present implementation may furtherinclude an embedded memory unit 1140 which stores data, a communicationmodule unit 1150 which can transmit and receive data to and from anexternal device in a wired or wireless manner, a memory control unit1160 which drives an external memory device, and a media processing unit1170 which processes the data processed in the processor 1100 or thedata inputted from an external input device and outputs the processeddata to an external interface device and so on. Besides, the processor1100 may include a plurality of various modules and devices. In thiscase, the plurality of modules which are added may exchange data withthe core units 1110 and the cache memory unit 1120 and with one another,through the bus interface 1130.

The embedded memory unit 1140 may include not only a volatile memory butalso a nonvolatile memory. The volatile memory may include a DRAM(dynamic random access memory), a mobile DRAM, an SRAM (static randomaccess memory), and a memory with similar functions to above mentionedmemories, and so on. The nonvolatile memory may include a ROM (read onlymemory), a NOR flash memory, a NAND flash memory, a phase change randomaccess memory (PRAM), a resistive random access memory (RRAM), a spintransfer torque random access memory (STTRAM), a magnetic random accessmemory (MRAM), a memory with similar functions.

The communication module unit 1150 may include a module capable of beingconnected with a wired network, a module capable of being connected witha wireless network and both of them. The wired network module mayinclude a local area network (LAN), a universal serial bus (USB), anEthernet, power line communication (PLC) such as various devices whichsend and receive data through transmit lines, and so on. The wirelessnetwork module may include Infrared Data Association (IrDA), codedivision multiple access (CDMA), time division multiple access (TDMA),frequency division multiple access (FDMA), a wireless LAN, Zigbee, aubiquitous sensor network (USN), Bluetooth, radio frequencyidentification (RFID), long term evolution (LTE), near fieldcommunication (NFC), a wireless broadband Internet (Wibro), high speeddownlink packet access (HSDPA), wideband CDMA (WCDMA), ultra wideband(UWB) such as various devices which send and receive data withouttransmit lines, and so on.

The memory control unit 1160 is to administrate and process datatransmitted between the processor 1100 and an external storage deviceoperating according to a different communication standard. The memorycontrol unit 1160 may include various memory controllers, for example,devices which may control IDE (Integrated Device Electronics), SATA(Serial Advanced Technology Attachment), SCSI (Small Computer SystemInterface), RAID (Redundant Array of Independent Disks), an SSD (solidstate disk), eSATA (External SATA), PCMCIA (Personal Computer MemoryCard International Association), a USB (universal serial bus), a securedigital (SD) card, a mini secure digital (mSD) card, a micro securedigital (micro SD) card, a secure digital high capacity (SDHC) card, amemory stick card, a smart media (SM) card, a multimedia card (MMC), anembedded MMC (eMMC), a compact flash (CF) card, and so on.

The media processing unit 1170 may process the data processed in theprocessor 1100 or the data inputted in the forms of image, voice andothers from the external input device and output the data to theexternal interface device. The media processing unit 1170 may include agraphic processing unit (GPU), a digital signal processor (DSP), a highdefinition audio device (HD audio), a high definition multimediainterface (HDMI) controller, and so on.

FIG. 6 is an example of configuration diagram of a system implementingmemory circuitry according to an implementation of the disclosedtechnology.

Referring to FIG. 6, a system 1200 as an apparatus for processing datamay perform input, processing, output, communication, storage, etc. toconduct a series of manipulations for data. The system 1200 may includea processor 1210, a main memory device 1220, an auxiliary memory device1230, an interface device 1240, and so on. The system 1200 of thepresent implementation may be various electronic systems which operateusing processors, such as a computer, a server, a PDA (personal digitalassistant), a portable computer, a web tablet, a wireless phone, amobile phone, a smart phone, a digital music player, a PMP (portablemultimedia player), a camera, a global positioning system (GPS), a videocamera, a voice recorder, a telematics, an audio visual (AV) system, asmart television, and so on.

The processor 1210 may decode inputted commands and processes operation,comparison, etc. for the data stored in the system 1200, and controlsthese operations. The processor 1210 may include a microprocessor unit(MPU), a central processing unit (CPU), a single/multi-core processor, agraphic processing unit (GPU), an application processor (AP), a digitalsignal processor (DSP), and so on.

The main memory device 1220 is a storage which can temporarily store,call and execute program codes or data from the auxiliary memory device1230 when programs are executed and can conserve memorized contents evenwhen power supply is cut off. The main memory device 1220 may includeone or more of the above-described semiconductor devices in accordancewith the implementations. For example, the main memory device 1220 mayinclude a first line; a second line spaced apart from the first line andextending in a direction crossing the first line; a third line spacedapart from the second line and extending in a direction crossing thesecond line; a first variable resistance element interposed between thefirst line and the second line and overlapping an intersection of thefirst line and the second line; a second variable resistance elementinterposed between the second line and the third line and overlapping anintersection of the second line and the third line, the second variableresistance element being more vulnerable to heat generated duringoperating the semiconductor memory, compared to the first variableresistance element; and a material layer interposed between the secondvariable resistance element and the second line or between the secondvariable resistance element and the third line, and showing an ohmicbehavior in an operating current or voltage of the semiconductor memory.Through this, fabricating processes may be simplified and defects may beprevented in the main memory device 1220. As a consequence, fabricatingprocesses may be simplified and defects may be prevented in the system1200.

Also, the main memory device 1220 may further include a static randomaccess memory (SRAM), a dynamic random access memory (DRAM), and so on,of a volatile memory type in which all contents are erased when powersupply is cut off. Unlike this, the main memory device 1220 may notinclude the semiconductor devices according to the implementations, butmay include a static random access memory (SRAM), a dynamic randomaccess memory (DRAM), and so on, of a volatile memory type in which allcontents are erased when power supply is cut off.

The auxiliary memory device 1230 is a memory device for storing programcodes or data. While the speed of the auxiliary memory device 1230 isslower than the main memory device 1220, the auxiliary memory device1230 can store a larger amount of data. The auxiliary memory device 1230may include one or more of the above-described semiconductor devices inaccordance with the implementations. For example, the auxiliary memorydevice 1230 may include a first line; a second line spaced apart fromthe first line and extending in a direction crossing the first line; athird line spaced apart from the second line and extending in adirection crossing the second line; a first variable resistance elementinterposed between the first line and the second line and overlapping anintersection of the first line and the second line; a second variableresistance element interposed between the second line and the third lineand overlapping an intersection of the second line and the third line,the second variable resistance element being more vulnerable to heatgenerated during operating the semiconductor memory, compared to thefirst variable resistance element; and a material layer interposedbetween the second variable resistance element and the second line orbetween the second variable resistance element and the third line, andshowing an ohmic behavior in an operating current or voltage of thesemiconductor memory. Through this, fabricating processes may besimplified and defects may be prevented in the auxiliary memory device1230. As a consequence, fabricating processes may be simplified anddefects may be prevented in the system 1200.

Also, the auxiliary memory device 1230 may further include a datastorage system (see the reference numeral 1300 of FIG. 7) such as amagnetic tape using magnetism, a magnetic disk, a laser disk usingoptics, a magneto-optical disc using both magnetism and optics, a solidstate disk (SSD), a USB memory (universal serial bus memory), a securedigital (SD) card, a mini secure digital (mSD) card, a micro securedigital (micro SD) card, a secure digital high capacity (SDHC) card, amemory stick card, a smart media (SM) card, a multimedia card (MMC), anembedded MMC (eMMC), a compact flash (CF) card, and so on. Unlike this,the auxiliary memory device 1230 may not include the semiconductordevices according to the implementations, but may include data storagesystems (see the reference numeral 1300 of FIG. 7) such as a magnetictape using magnetism, a magnetic disk, a laser disk using optics, amagneto-optical disc using both magnetism and optics, a solid state disk(SSD), a USB memory (universal serial bus memory), a secure digital (SD)card, a mini secure digital (mSD) card, a micro secure digital (microSD) card, a secure digital high capacity (SDHC) card, a memory stickcard, a smart media (SM) card, a multimedia card (MMC), an embedded MMC(eMMC), a compact flash (CF) card, and so on.

The interface device 1240 may be to perform exchange of commands anddata between the system 1200 of the present implementation and anexternal device. The interface device 1240 may be a keypad, a keyboard,a mouse, a speaker, a mike, a display, various human interface devices(HIDs), a communication device, and so on. The communication device mayinclude a module capable of being connected with a wired network, amodule capable of being connected with a wireless network and both ofthem. The wired network module may include a local area network (LAN), auniversal serial bus (USB), an Ethernet, power line communication (PLC),such as various devices which send and receive data through transmitlines, and so on. The wireless network module may include Infrared DataAssociation (IrDA), code division multiple access (CDMA), time divisionmultiple access (TDMA), frequency division multiple access (FDMA), awireless LAN, Zigbee, a ubiquitous sensor network (USN), Bluetooth,radio frequency identification (RFID), long term evolution (LTE), nearfield communication (NFC), a wireless broadband Internet (Wibro), highspeed downlink packet access (HSDPA), wideband CDMA (WCDMA), ultrawideband (UWB), such as various devices which send and receive datawithout transmit lines, and so on.

FIG. 7 is an example of configuration diagram of a data storage systemimplementing memory circuitry according to an implementation of thedisclosed technology.

Referring to FIG. 7, a data storage system 1300 may include a storagedevice 1310 which has a nonvolatile characteristic as a component forstoring data, a controller 1320 which controls the storage device 1310,an interface 1330 for connection with an external device, and atemporary storage device 1340 for storing data temporarily. The datastorage system 1300 may be a disk type such as a hard disk drive (HDD),a compact disc read only memory (CDROM), a digital versatile disc (DVD),a solid state disk (SSD), and so on, and a card type such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on.

The storage device 1310 may include a nonvolatile memory which storesdata semi-permanently. The nonvolatile memory may include a ROM (readonly memory), a NOR flash memory, a NAND flash memory, a phase changerandom access memory (PRAM), a resistive random access memory (RRAM), amagnetic random access memory (MRAM), and so on.

The controller 1320 may control exchange of data between the storagedevice 1310 and the interface 1330. To this end, the controller 1320 mayinclude a processor 1321 for performing an operation for, processingcommands inputted through the interface 1330 from an outside of the datastorage system 1300 and so on.

The interface 1330 is to perform exchange of commands and data betweenthe data storage system 1300 and the external device. In the case wherethe data storage system 1300 is a card type, the interface 1330 may becompatible with interfaces which are used in devices, such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on, or be compatible with interfaceswhich are used in devices similar to the above mentioned devices. In thecase where the data storage system 1300 is a disk type, the interface1330 may be compatible with interfaces, such as IDE (Integrated DeviceElectronics), SATA (Serial Advanced Technology Attachment), SCSI (SmallComputer System Interface), eSATA (External SATA), PCMCIA (PersonalComputer Memory Card International Association), a USB (universal serialbus), and so on, or be compatible with the interfaces which are similarto the above mentioned interfaces. The interface 1330 may be compatiblewith one or more interfaces having a different type from each other.

The temporary storage device 1340 can store data temporarily forefficiently transferring data between the interface 1330 and the storagedevice 1310 according to diversifications and high performance of aninterface with an external device, a controller and a system. Thetemporary storage device 1340 for temporarily storing data may includeone or more of the above-described semiconductor devices in accordancewith the implementations. The temporary storage device 1340 may includea first line; a second line spaced apart from the first line andextending in a direction crossing the first line; a third line spacedapart from the second line and extending in a direction crossing thesecond line; a first variable resistance element interposed between thefirst line and the second line and overlapping an intersection of thefirst line and the second line; a second variable resistance elementinterposed between the second line and the third line and overlapping anintersection of the second line and the third line, the second variableresistance element being more vulnerable to heat generated duringoperating the semiconductor memory, compared to the first variableresistance element; and a material layer interposed between the secondvariable resistance element and the second line or between the secondvariable resistance element and the third line, and showing an ohmicbehavior in an operating current or voltage of the semiconductor memory.Through this, fabricating processes may be simplified and defects may beprevented in the temporary storage device 1340. As a consequence,fabricating processes may be simplified and defects may be prevented inthe data storage system 1300.

FIG. 8 is an example of configuration diagram of a memory systemimplementing memory circuitry according to an implementation of thedisclosed technology.

Referring to FIG. 8, a memory system 1400 may include a memory 1410which has a nonvolatile characteristic as a component for storing data,a memory controller 1420 which controls the memory 1410, an interface1430 for connection with an external device, and so on. The memorysystem 1400 may be a card type such as a solid state disk (SSD), a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on.

The memory 1410 for storing data may include one or more of theabove-described semiconductor devices in accordance with theimplementations. For example, the memory 1410 may include a first line;a second line spaced apart from the first line and extending in adirection crossing the first line; a third line spaced apart from thesecond line and extending in a direction crossing the second line; afirst variable resistance element interposed between the first line andthe second line and overlapping an intersection of the first line andthe second line; a second variable resistance element interposed betweenthe second line and the third line and overlapping an intersection ofthe second line and the third line, the second variable resistanceelement being more vulnerable to heat generated during operating thesemiconductor memory, compared to the first variable resistance element;and a material layer interposed between the second variable resistanceelement and the second line or between the second variable resistanceelement and the third line, and showing an ohmic behavior in anoperating current or voltage of the semiconductor memory. Through this,fabricating processes may be simplified and defects may be prevented inthe memory 1410. As a consequence, fabricating processes may besimplified and defects may be prevented in the memory system 1400.

Also, the memory 1410 according to the present implementation mayfurther include a ROM (read only memory), a NOR flash memory, a NANDflash memory, a phase change random access memory (PRAM), a resistiverandom access memory (RRAM), a magnetic random access memory (MRAM), andso on, which have a nonvolatile characteristic.

The memory controller 1420 may control exchange of data between thememory 1410 and the interface 1430. To this end, the memory controller1420 may include a processor 1421 for performing an operation for andprocessing commands inputted through the interface 1430 from an outsideof the memory system 1400.

The interface 1430 is to perform exchange of commands and data betweenthe memory system 1400 and the external device. The interface 1430 maybe compatible with interfaces which are used in devices, such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on, or be compatible with interfaceswhich are used in devices similar to the above mentioned devices. Theinterface 1430 may be compatible with one or more interfaces having adifferent type from each other.

The memory system 1400 according to the present implementation mayfurther include a buffer memory 1440 for efficiently transferring databetween the interface 1430 and the memory 1410 according todiversification and high performance of an interface with an externaldevice, a memory controller and a memory system. For example, the buffermemory 1440 for temporarily storing data may include one or more of theabove-described semiconductor devices in accordance with theimplementations. The buffer memory 1440 may include a first line; asecond line spaced apart from the first line and extending in adirection crossing the first line; a third line spaced apart from thesecond line and extending in a direction crossing the second line; afirst variable resistance element interposed between the first line andthe second line and overlapping an intersection of the first line andthe second line; a second variable resistance element interposed betweenthe second line and the third line and overlapping an intersection ofthe second line and the third line, the second variable resistanceelement being more vulnerable to heat generated during operating thesemiconductor memory, compared to the first variable resistance element;and a material layer interposed between the second variable resistanceelement and the second line or between the second variable resistanceelement and the third line, and showing an ohmic behavior in anoperating current or voltage of the semiconductor memory. Through this,fabricating processes may be simplified and defects may be prevented inthe buffer memory 1440. As a consequence, fabricating processes may besimplified and defects may be prevented in the memory system 1400.

Moreover, the buffer memory 1440 according to the present implementationmay further include an SRAM (static random access memory), a DRAM(dynamic random access memory), and so on, which have a volatilecharacteristic, and a phase change random access memory (PRAM), aresistive random access memory (RRAM), a spin transfer torque randomaccess memory (STTRAM), a magnetic random access memory (MRAM), and soon, which have a nonvolatile characteristic. Unlike this, the buffermemory 1440 may not include the semiconductor devices according to theimplementations, but may include an SRAM (static random access memory),a DRAM (dynamic random access memory), and so on, which have a volatilecharacteristic, and a phase change random access memory (PRAM), aresistive random access memory (RRAM), a spin transfer torque randomaccess memory (STTRAM), a magnetic random access memory (MRAM), and soon, which have a nonvolatile characteristic.

Features in the above examples of electronic devices or systems in FIGS.4-8 based on the memory devices disclosed in this document may beimplemented in various devices, systems or applications. Some examplesinclude mobile phones or other portable communication devices, tabletcomputers, notebook or laptop computers, game machines, smart TV sets,TV set top boxes, multimedia servers, digital cameras with or withoutwireless communication functions, wrist watches or other wearabledevices with wireless communication capabilities.

While this patent document contains many specifics, these should not beconstrued as limitations on the scope of any invention or of what may beclaimed, but rather as descriptions of features that may be specific toparticular embodiments of particular inventions. Certain features thatare described in this patent document in the context of separateembodiments can also be implemented in combination in a singleembodiment. Conversely, various features that are described in thecontext of a single embodiment can also be implemented in multipleembodiments separately or in any suitable subcombination. Moreover,although features may be described above as acting in certaincombinations and even initially claimed as such, one or more featuresfrom a claimed combination can in some cases be excised from thecombination, and the claimed combination may be directed to asubcombination or variation of a subcombination.

Similarly, while operations are depicted in the drawings in a particularorder, this should not be understood as requiring that such operationsbe performed in the particular order shown or in sequential order, orthat all illustrated operations be performed, to achieve desirableresults. Moreover, the separation of various system components in theembodiments described in this patent document should not be understoodas requiring such separation in all embodiments.

Only a few implementations and examples are described. Otherimplementations, enhancements and variations can be made based on whatis described and illustrated in this patent document.

What is claimed is:
 1. An electronic device, comprising a semiconductormemory that includes: a first line; a second line being spaced apartfrom the first line and extending in a direction that crosses the firstline; a third line being spaced apart from the second line and extendingin a direction that crosses the second line; a first variable resistanceelement interposed between the first line and the second line, the firstvariable resistance element overlapping an intersection of the firstline and the second line; a second variable resistance elementinterposed between the second line and the third line, the secondvariable resistance element overlapping an intersection of the secondline and the third line, a part of the second variable resistanceelement being configured to generate a greater amount of heat than apart of the first variable resistance element when a direction of acurrent flowing through the first variable resistance element isopposite to a direction of a current flowing through the second variableresistance element; and a material layer connected in series with thesecond variable resistance element and disposed between the second lineand the third line, the material layer exhibiting an electricalresistance.
 2. The electronic device according to claim 1, wherein thematerial layer includes an insulating material having a sufficientthickness to exhibit the electrical resistance.
 3. The electronic deviceaccording to claim 2, wherein the insulating material includes a metaloxide, a silicon oxide, a silicon nitride, or a combination thereof. 4.The electronic device according to claim 1, wherein the material layeris amorphous.
 5. The electronic device according to claim 1, wherein asurface of the material layer is in contact with a first surface of thesecond variable resistance element and the surface of the material layerhas a larger size than the first surface of the second variableresistance element.
 6. The electronic device according to claim 1,wherein the direction of the current flowing through the second variableresistance element is a direction from the second line toward the thirdline, and the material layer is interposed between the second variableresistance element and the second line.
 7. The electronic deviceaccording to claim 1, wherein the direction of the current flowingthrough the second variable resistance element is a direction from thethird line toward the second line, and the material layer is interposedbetween the second variable resistance element and the third line.
 8. Anelectronic device, comprising a semiconductor memory that includes: afirst line; a second line being spaced apart from the first line andextending in a direction crossing the first line; a third line beingspaced apart from the second line and extending in a direction crossingthe second line; a first variable resistance element interposed betweenthe first line and the second line, the first variable resistanceelement overlapping an intersection of the first line and the secondline and including a first electrode layer, a first variable resistancelayer, and a second electrode layer, which are stacked in a directionfrom the first line toward the second line; a second variable resistanceelement interposed between the second line and the third line, thesecond variable resistance element overlapping an intersection of thesecond line and the third line and including a third electrode layer, asecond variable resistance layer, and a fourth electrode layer, whichare stacked in a direction from the second line toward the third line,where a difference in Seebeck coefficients between a material of thefirst and third electrode layers and a material of the first and secondvariable resistance layers is different from a difference in Seebeckcoefficients between a material of the second and fourth electrodelayers and the material of the first and second variable resistancelayers; and a material layer coupled in series to the second variableresistance element and disposed between the second line and the thirdline, the material layer having an electrical resistance.
 9. Theelectronic device according to claim 8, wherein the difference in theSeebeck coefficients between the material of the first and thirdelectrode layers and the material of the first and second variableresistance layers is smaller than the difference in the Seebeckcoefficients between the material of the second and fourth electrodelayers and the material of the first and second variable resistancelayers, wherein a current flows through the first variable resistanceelement in a direction from the second line to the first line and acurrent flows through the second variable resistance element in adirection from the second line toward the third line, and wherein thematerial layer is interposed between the second line and the secondvariable resistance element.
 10. The electronic device according toclaim 8, wherein the difference in the Seebeck coefficients between thematerial of the first and third electrode layers and the material of thefirst and second variable resistance layers is larger than thedifference in the Seebeck coefficients between the material of thesecond and fourth electrode layers and the material of the first andsecond variable resistance layers, wherein a current flows through thefirst variable resistance element in a direction from the second linetoward the first line and a current flows through the second variableresistance element in a direction from the second line toward the thirdline, and wherein the material layer is interposed between the secondline and the first variable resistance element.
 11. The electronicdevice according to claim 8, wherein the difference in the Seebeckcoefficients between the material of the first and third electrodelayers and the material of the first and second variable resistancelayers is smaller than the difference in the Seebeck coefficientsbetween the material of the second and fourth electrode layers and thematerial of the first and second variable resistance layers, wherein acurrent flows through the first variable resistance element in adirection from the first line to the second line and a current flowsthrough the second variable resistance element in a direction from thethird line toward the second line, and wherein the material layer isinterposed between the first line and the first variable resistanceelement.
 12. The electronic device according to claim 8, wherein thedifference in the Seebeck coefficients between the material of the firstand third electrode layers and the material of the first and secondvariable resistance layers is larger than the difference in the Seebeckcoefficients between the material of the second and fourth electrodelayers and the material of the first and second variable resistancelayers, wherein a current flows through the first variable resistanceelement in a direction from the first line toward the second line and acurrent flows through the second variable resistance element from thethird line toward the second line, and the material layer is interposedbetween the third line and the second variable resistance element. 13.The electronic device according to claim 8, wherein the material layerincludes an insulating material having a sufficient thickness to exhibitthe electrical resistance.
 14. The electronic device according to claim13, wherein the insulating material includes a metal oxide, a siliconoxide, a silicon nitride, or a combination thereof.
 15. The electronicdevice according to claim 8, wherein the material layer is amorphous.16. The electronic device according to claim 8, wherein a surface of thematerial layer is in contact with a first surface, the first surfacebeing a surface of the second variable resistance element or a surfaceof the first variable resistance element, the surface of the materiallayer having a larger size than the first surface.
 17. An electronicdevice, comprising a semiconductor memory that includes: a first line; asecond line spaced apart from the first line, the second line extendingin a direction that crosses the first line; a third line spaced apartfrom the second line, the third line extending in a direction thatcrosses the second line; a first variable resistance element interposedbetween the first line and the second line, the first variableresistance element overlapping an intersection of the first line and thesecond line and having a multi-layered structure including a firstvariable resistance layer; a second variable resistance elementinterposed between the second line and the third line, the secondvariable resistance element overlapping an intersection of the secondline and the third line and having a multi-layered structure including asecond variable resistance layer; and a material layer having anelectrical resistance, wherein the material layer is interposed betweenthe second variable resistance element and one of the second line andthe third line, and wherein a current flow path to the second variableresistance layer is longer than a current flow path to the firstvariable resistance layer.
 18. The electronic device according to claim17, wherein the material layer includes an insulating material having asufficient thickness to exhibit the electrical resistance.
 19. Theelectronic device according to claim 18, wherein the insulating materialincludes a metal oxide, a silicon oxide, a silicon nitride, or acombination thereof.
 20. The electronic device according to claim 17,wherein the material layer is amorphous.
 21. The electronic deviceaccording to claim 17, wherein a surface of the material layer is incontact with a first surface of the second variable resistance element,the surface of the material layer having a larger size than the firstsurface.
 22. The electronic device according to claim 17, wherein,during operating the semiconductor memory, a direction of a currentflowing through the first variable resistance element is opposite to adirection of a current flowing through the second variable resistanceelement.
 23. The electronic device according to claim 22, wherein thedirection of the current flowing through the second variable resistanceelement is a direction from the second line toward the third line, andwherein the material layer is interposed between the second variableresistance element and the second line.
 24. The electronic deviceaccording to claim 22, wherein the direction of the current flowingthrough the second variable resistance element is a direction from thethird line toward the second line, and wherein the material layer isinterposed between the second variable resistance element and the thirdline.
 25. An electronic device, comprising a semiconductor memory thatincludes: a first line; a second line being spaced apart from the firstline and extending in a direction that crosses the first line; a thirdline being spaced apart from the second line and extending in adirection that crosses the second line; a first variable resistanceelement interposed between the first line and the second line, the firstvariable resistance element overlapping an intersection of the firstline and the second line and including a first phase change material; asecond variable resistance element interposed between the second lineand the third line, the second variable resistance element overlappingan intersection of the second line and the third line and including asecond phase change material, a magnitude of a current required for aphase change of the second phase change material being smaller than amagnitude of a current required for a phase change of the first phasechange material when a direction of a current flowing through the firstvariable resistance element is opposite to a direction of a currentflowing through the second variable resistance element; and a materiallayer connected in series with the second variable resistance elementand disposed between the second line and the third line, the materiallayer exhibiting an electrical resistance.